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APTGF50DA120CT1G Boost chopper NPT IGBT SiC Chopper diode Application 5 6 11 VCES = 1200V IC = 50A @ Tc = 80C CR1 * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features 3 4 CR2 9 10 1 2 12 * NTC Q2 Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Low leakage current - RBSOA and SCSOA rated Chopper SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration * * * * Benefits * * * * Pins 1/2 ; 3/4 ; 5/6 must be shorted together * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Max ratings 1200 75 50 150 20 312 100A @ 1200V Unit V A V W September, 2009 1-7 APTGF50DA120CT1G - Rev 0 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF50DA120CT1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V Tj = 25C VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 3.7 6.5 100 Unit A V V nA 3.2 4.0 4.5 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A RG = 5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A RG = 5 VGE = 15V Tj = 125C VBus = 600V IC = 50A Tj = 125C RG = 5 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Min Typ 3450 330 220 330 35 200 35 65 320 30 35 65 360 40 4.2 mJ 3.05 300 A Max Unit pF nC ns ns Chopper SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 100C Min 1200 Typ 64 112 20 1.6 2.3 80 192 138 Max 400 2000 1.8 3 Unit V A A V nC pF September, 2009 2-7 APTGF50DA120CT1G - Rev 0 Tj = 25C Tj = 175C IF = 20A, VR = 600V di/dt =1000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V www.microsemi.com APTGF50DA120CT1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT SiC Chopper Diode 4000 -40 -40 -40 2.5 Min Typ Max 0.4 1 150 125 100 4.7 80 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V C N.m g To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 5 3952 4 Max Unit k % K % SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTGF50DA120CT1G - Rev 0 September, 2009 APTGF50DA120CT1G Typical IGBT Performance Curve 100 Ic, Collector Current (A) 80 60 40 20 0 0 1 2 3 4 5 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 Gate Charge (nC) DC Collector Current vs Case Temperature VCE=960V IC = 50A TJ = 25C VCE=240V VCE=600V 250s Pulse Test < 0.5% Duty cycle Output characteristics (VGE=15V) 250s Pulse Test < 0.5% Duty cycle 40 Ic, Collector Current (A) Output Characteristics (VGE=10V) 250s Pulse Test < 0.5% Duty cycle TJ=25C 30 TJ=25C TJ=125C 20 TJ=125C 10 0 6 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge 4 100 Ic, Collector Current (A) 75 50 TJ=125C 25 TJ=25C 0 0 2 4 6 8 10 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.15 12 70 Ic, DC Collector Current (A) 60 50 40 30 20 10 0 1.10 1.05 1.00 0.95 25 50 75 100 125 TJ, Junction Temperature (C) 25 50 75 100 125 TC, Case Temperature (C) 150 www.microsemi.com 4-7 APTGF50DA120CT1G - Rev 0 September, 2009 APTGF50DA120CT1G Turn-On Delay Time vs Collector Current VCE = 600V RG = 5 VGE = 15V Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) 45 400 VGE=15V, TJ=125C 40 350 35 300 VGE=15V, TJ=25C VCE = 600V RG = 5 30 250 25 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 180 VCE = 600V RG = 5 200 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current 50 45 tr, Rise Time (ns) tf, Fall Time (ns) 140 40 35 30 TJ = 125C 100 VGE=15V 60 TJ = 25C 25 20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125 20 0 VCE = 600V, VGE = 15V, RG = 5 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Eon, Turn-On Energy Loss (mJ) 14 12 10 8 6 4 2 0 0 VCE = 600V RG = 5 TJ=125C, VGE=15V Eoff, Turn-off Energy Loss (mJ) 16 Turn-On Energy Loss vs Collector Current 8 Turn-Off Energy Loss vs Collector Current VCE = 600V VGE = 15V RG = 5 TJ = 125C 6 4 TJ = 25C TJ=25C, VGE=15V 2 0 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Switching Energy Losses (mJ) Switching Energy Losses vs Gate Resistance 10 Switching Energy Losses (mJ) 8 6 4 2 0 0 Eoff, 25A Eoff, 25A VCE = 600V VGE = 15V TJ= 125C Eon, 50A Eoff, 50A 5 4 3 2 1 0 Switching Energy Losses vs Junction Temp. VCE = 600V VGE = 15V RG = 5 Eon, 50A Eoff, 50A Eon, 25A Eon, 25A 10 20 30 40 Gate Resistance (Ohms) 50 25 50 75 100 TJ, Junction Temperature (C) 125 www.microsemi.com 5-7 APTGF50DA120CT1G - Rev 0 Eoff, 25A September, 2009 APTGF50DA120CT1G Capacitance vs Collector to Emitter Voltage 10000 Cies Reverse Bias Safe Operating Area 120 IC, Collector Current (A) 100 80 60 40 20 0 0 400 800 1200 VCE, Collector to Emitter Voltage (V) C, Capacitance (pF) 1000 Coes 100 0 Cres 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.7 0.5 0.9 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Single Pulse 0.0001 0.001 0.01 0.1 1 10 0 0.00001 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100 ZVS VCE = 600V D = 50% RG = 5 TJ = 125C TC= 75C ZCS Fmax, Operating Frequency (kHz) 80 60 40 20 0 10 Hard switching www.microsemi.com 6-7 APTGF50DA120CT1G - Rev 0 September, 2009 20 30 40 50 IC, Collector Current (A) 60 APTGF50DA120CT1G Typical SiC chopper diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W) 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25C Reverse Characteristics 200 IR Reverse Current (A) 40 IF Forward Current (A) 30 20 TJ=75C 150 100 TJ=125C TJ=75C TJ=125C TJ=175C TJ=25C 10 0 0 0.5 1 1.5 2 TJ=175C 50 2.5 3 3.5 0 400 600 800 1000 1200 1400 1600 VF Forward Voltage (V) Capacitance vs.Reverse Voltage VR Reverse Voltage (V) 1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0 1 10 100 VR Reverse Voltage 1000 September, 2009 7-7 APTGF50DA120CT1G - Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com |
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